Semiconductor memory device

ABSTRACT

A semiconductor memory device includes a first memory block having a first memory cell transistor and a first select transistor, a second memory block having a second memory cell transistor and a second select transistor, a first select gate line that is electrically connected to a gate of the first select transistor, and a second select gate line that is electrically connected to a gate of the second select transistor. During writing of data to a memory cell transistor in the first block, a first voltage is applied to the first select gate line during a first time period, a second voltage is applied to the second select gate line during a second time period after the first time period, and a third voltage lower than the first voltage is applied to the first select gate line during a third time period after the second time period.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.15/051,546, filed Feb. 23, 2016, which is based upon and claims thebenefit of priority from Japanese Patent Application No. 2015-033518,filed Feb. 24, 2015, the entire contents of which are incorporatedherein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

A NAND type flash memory is one type of a semiconductor memory device.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a semiconductor memory device according toa first embodiment.

FIG. 2 is a circuit diagram of a sense amplifier unit which is includedin the semiconductor memory device according to the first embodiment.

FIG. 3 is a diagram illustrating an operation of the sense amplifierunit included in the semiconductor memory device according to the firstembodiment.

FIG. 4 is a diagram illustrating an operation of the sense amplifierunit which is included in the semiconductor memory device according tothe first embodiment.

FIG. 5 is a flow diagram of a write operation of the semiconductormemory device according to the first embodiment.

FIG. 6 is a timing diagram illustrating a potential of various linesduring writing of the semiconductor memory device according to the firstembodiment.

FIGS. 7-11 are diagrams illustrating states of various lines duringwriting of the semiconductor memory device according to the firstembodiment.

FIG. 12 is a circuit diagram of a memory cell array which is included ina semiconductor memory device according to a second embodiment.

FIG. 13 is a cross-sectional view of the memory cell array of thesemiconductor memory device according to the second embodiment.

FIG. 14A and FIG. 14B are timing diagrams illustrating a potential ofvarious lines during writing of the semiconductor memory deviceaccording to the second embodiment.

FIG. 15A and FIG. 15B are diagrams illustrating a threshold voltage of amemory cell transistor during first and second programming operations ofa semiconductor memory device according to a third embodiment.

FIG. 16 is a flow diagram of a write operation of the semiconductormemory device according to the third embodiment.

FIG. 17 is a timing diagram illustrating a potential of various linesduring writing of the semiconductor memory device according to the thirdembodiment.

FIG. 18 is a flow diagram of a write operation of a semiconductor memorydevice according to a fourth embodiment.

FIG. 19 is a timing diagram illustrating a potential of various linesduring writing of the semiconductor memory device according to thefourth embodiment.

FIG. 20 is a timing diagram illustrating a potential of various linesduring writing of a semiconductor memory device according to amodification example of the first embodiment.

DETAILED DESCRIPTION

Embodiments now will be described more fully hereinafter with referenceto the accompanying drawings. In the drawings, the thickness of layersand regions may be exaggerated for clarity. Like numbers refer to likeelements throughout. As used herein the term “and/or” includes any andall combinations of one or more of the associated listed items and maybe abbreviated as “/”.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises,”“comprising,” “having,” “includes,” “including” and/or variationsthereof, when used in this specification, specify the presence of statedfeatures, regions, steps, operations, elements, and/or components, butdo not preclude the presence or addition of one or more other features,regions, steps, operations, elements, components, and/or groups thereof.

It will be understood that when an element such as a layer or region isreferred to as being “on” or extending “onto” another element (and/orvariations thereof), it may be directly on or extend directly onto theother element or intervening elements may also be present. In contrast,when an element is referred to as being “directly on” or extending“directly onto” another element (and/or variations thereof), there areno intervening elements present. It will also be understood that when anelement is referred to as being “connected” or “coupled” to anotherelement (and/or variations thereof), it may be directly connected orcoupled to the other element or intervening elements may be present. Incontrast, when an element is referred to as being “directly connected”or “directly coupled” to another element (and/or variations thereof),there are no intervening elements present.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, such elements, materials, regions, layers and/orsections should not be limited by these terms. These terms are only usedto distinguish one element, material, region, layer or section fromanother element, material, region, layer or section. Thus, a firstelement, material, region, layer or section discussed below could betermed a second element, material, region, layer or section withoutdeparting from the teachings of the present invention.

Relative terms, such as “lower”, “back”, and “upper” may be used hereinto describe one element's relationship to another element as illustratedin the Figures. It will be understood that relative terms are intendedto encompass different orientations of the device in addition to theorientation depicted in the Figures. For example, if the structure inthe Figure is turned over, elements described as being on the “backside”of substrate would then be oriented on “upper” surface of the substrate.The exemplary term “upper”, may therefore, encompasses both anorientation of “lower” and “upper,” depending on the particularorientation of the figure. Similarly, if the structure in one of thefigures is turned over, elements described as “below” or “beneath” otherelements would then be oriented “above” the other elements. Theexemplary terms “below” or “beneath” may, therefore, encompass both anorientation of above and below.

Embodiments are described herein with reference to cross section andperspective illustrations that are schematic illustrations of theembodiments. As such, variations from the shapes of the illustrations asa result, for example, of manufacturing techniques and/or tolerances,are to be expected. Thus, embodiments should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, a region illustrated or described as flatmay, typically, have rough and/or nonlinear features. Moreover, sharpangles that are illustrated, typically, may be rounded. Thus, theregions illustrated in the figures are schematic in nature and theirshapes are not intended to illustrate the precise shape of a region andare not intended to limit the scope of the present invention.

A semiconductor memory device capable of improving the reliability of awrite operation is provided.

In general, according to one embodiment, a semiconductor memory devicecomprises a first block including a first memory string that includes afirst memory cell transistor and a first select transistor, a secondblock including a second memory string that includes a second memorycell transistor and a second select transistor, a first select gate linethat is electrically connected to a gate of the first select transistor,and a second select gate line that is electrically connected to a gateof the second select transistor. During writing of data to a memory celltransistor in the first block, a first voltage is applied to the firstselect gate line during a first time period, a second voltage is appliedto the second select gate line during a second time period after thefirst time period, and a third voltage lower than the first voltage isapplied to the first select gate line during a third time period afterthe second time period.

Hereinafter, embodiments will be described with reference to theaccompanying drawings. In the description, common portions are denotedby the same reference numerals throughout the drawings.

1. First Embodiment

A semiconductor memory device according to a first embodiment will bedescribed. Hereinafter, a description will be given by taking an exampleof a flat NAND type flash memory in which memory cell transistors aretwo-dimensionally arranged on a semiconductor substrate, as thesemiconductor memory device.

1.1 Configuration

1.1.1 Configuration of Semiconductor Memory Device

First, the configuration of the semiconductor memory device will bedescribed with reference to FIG. 1. As illustrated in the drawing, aNAND type flash memory 100 includes a core circuit 110 and a peripheralcircuit 120.

The core circuit 110 includes a memory cell array 111, a row decoder112, and a sense amplifier 113.

The memory cell array 111 includes a plurality of blocks BLK (BLK0,BLK1, . . . ) each of which includes a plurality of nonvolatile memorycell transistors. Data within the same block BLK are collectivelyerased. Alternatively, collectively data erasing is not limited to oneblock BLK, and a plurality of blocks BLK may be collectively erased, orsome regions within one block BLK may be collectively erased.

Other data erasing techniques may be employed in the embodiments, suchas data erasing disclosed in U.S. patent application Ser. No.12/694,690, filed on Jan. 27, 2010, which is entitled “NONVOLATILESEMICONDUCTOR MEMORY DEVICE,” and data erasing disclosed in U.S. patentapplication Ser. No. 13/235,389, filed on Sep. 18, 2011, which isentitled “NONVOLATILE SEMICONDUCTOR MEMORY DEVICE.” The entire contentsof these patent applications are incorporated by reference herein.

Each of the blocks BLK includes a plurality of NAND strings 116 in eachof which memory cell transistors are connected to each other in series.The memory cell transistors are two-dimensionally arrayed on asemiconductor substrate. Meanwhile, the number of NAND strings 116included in one block is arbitrary.

Each of the NAND strings 116 includes, for example, sixteen memory celltransistors MT (MT0 to MT15) and select transistors ST1 and ST2. Thememory cell transistor MT includes a stacked gate including a controlgate and a charge storage layer, and stores data in a nonvolatilemanner. Meanwhile, the memory cell transistor MT may be a MONOS typememory cell transistor using an insulating film for a charge storagelayer, or may be an FG type memory cell transistor using a conductivefilm for a charge storage layer. Further, the number of memory celltransistors MT is not limited to sixteen. The number of memory celltransistors may be eight, thirty-two, sixty-four, one hundred andtwenty-eight, or the like, and is not limited to any number. In thisembodiment, the memory cell transistor MT may store data of one bit,that is, data “1” or data “0”. In this embodiment, a state where data iserased by the extraction of charge from the charge storage layer isdefined as data “1”. On the other hand, a state where data is written bythe injection of charge into the charge storage layer is defined as data“0”. Accordingly, a threshold voltage of the memory cell transistorstoring data “1” is lower than a threshold voltage of the memory celltransistor storing data “0”. Meanwhile, a relationship between each dataand a threshold voltage level is not limited to that described above,and may be appropriately modified. Further, the memory cell transistorMT may store data of 2 bits or more.

Current paths of the memory cell transistors MT0 to MT15 are connectedto each other in series. A drain of the memory cell transistor MT0 onone end side of the series connection is connected to a source of theselect transistor ST1, and a source of the memory cell transistor MT15on the other end side is connected to a drain of the select transistorST2.

Gates of the select transistors ST1 within the same block BLK areconnected in common to the same select gate line SGD. In the example ofFIG. 1, gates of the select transistors ST1 within the block BLK0 areconnected in common to a select gate line SGD0, and gates of selecttransistors ST1, not shown in the drawing, within the block BLK1 areconnected in common to a select gate line SGD1. Similarly, gates ofselect transistors ST2 within the same block BLK are connected in commonto the same select gate line SGS.

In addition, control gates of memory cell transistors MT of therespective NAND strings 116 within the block BLK are connected in commonto different word lines WL0 to WL15.

In addition, in the NAND strings 116 arranged in a matrix within thememory cell array 111, drains of select transistors ST1 of the NANDstrings 116 of the same column are connected in common to one bit lineBL (BL0 to BL (N−1), where (N−1) is a natural number of 1 or greater).That is, the bit line BL connects in common the NAND strings 116 acrossthe plurality of blocks BLK. In addition, sources of select transistorsST2 within each block BLK are connected in common to a source line SL.That is, the source line SL connects in common, for example, the NANDstrings 116 across the plurality of blocks BLK.

The row decoder 112 decodes an address of the block BLK and an addressof a page, for example, during writing and reading of data to select aword line corresponding to a target page. The row decoder 112 applies anappropriate voltage to a selected word line WL, a non-selected word lineWL, and select gate lines SGD and SGS.

The sense amplifier 113 includes a plurality of sense amplifier unitsSAU. The sense amplifier unit SAU is provided for each bit line BL, andsenses and amplifies data read out from the memory cell transistor MT tothe bit line BL during the reading of data. In addition, the senseamplifier unit transmits write data to the memory cell transistor MTduring the writing of data. In addition, each of the sense amplifierunits SAU includes a latch circuit for storing data. The sense amplifierunit SAU will be described later in detail.

The peripheral circuit 120 includes a sequencer 121, a charge pump 122,a register 123, and a driver 124.

The sequencer 121 controls the operation of the NAND type flash memory100.

The charge pump 122 generates voltages necessary for the writing,reading, and erasing of data and supplies the generated voltages to thedriver 124.

The driver 124 supplies voltages necessary for the writing, reading, anderasing of data to the row decoder 112, the sense amplifier 113, and thesource line SL. The row decoder 112 and the sense amplifier 113 apply avoltage supplied from the driver 124 to the memory cell transistor MT.

The register 123 stores various data. For example, the register storesthe status of data writing and erasing operations, and thus notifies,for example, an external controller of whether or not the operationshave normally completed. Alternatively, the register 123 may storevarious tables.

1.1.2 Sense Amplifier

Next, the configuration of the sense amplifier 113 will be described indetail with reference to FIG. 2. In this embodiment, a current sensingtype sense amplifier 113 that senses a current flowing through the bitline BL will be described as an example.

In the current sensing type sense amplifier, pieces of data arecollectively read from memory cell transistors MT which are connected incommon to a word line WL in any block BLK (this unit will be referred toas a “page”). Accordingly, in the sense amplifier 113 according to thisembodiment, the sense amplifier unit SAU illustrated in FIG. 2 isprovided for each bit line.

As illustrated in the drawing, the sense amplifier unit SAU includes asense amplifier unit 200 and a latch circuit 210. Although only onelatch circuit 210 is illustrated in FIG. 2, a plurality of latchcircuits may be provided. For example, when each of the memory celltransistors MT stores data of 2 bits or more, it is preferable toprovide a plurality of latch circuits.

The sense amplifier unit 200 includes a high breakdown voltage n-channelMOS transistor 40, low breakdown voltage n-channel MOS transistors 41 to47, low breakdown voltage p-channel MOS transistors 48 to 51, and acapacitor element 58. The breakdown voltages of the transistors 41 to 51are lower than that of the transistor 40. More specifically, the filmthicknesses of gate insulating films of the transistors 41 to 51, forexample, are less than that of the transistor 40.

In the transistor 40, a signal BLS is input to the gate thereof, one ofthe source and the drain thereof is connected to the corresponding bitline BL, and the other one is connected to a node BLI. In the transistor41, a signal BLC is input to the gate thereof, one of the source and thedrain thereof is connected to the node BLI, and the other one isconnected to a node COM2. The transistor 41 is used to clamp thecorresponding bit line BL to a potential based on the signal BLC.

In the transistor 42, a signal BLX is input to the gate thereof, one ofthe source and the drain thereof is connected to a power supply, and apower supply voltage VDDSA is applied from the power supply. Inaddition, the other one of the source and the drain is connected to anode COM1.

In the transistor 43, a node LAT is connected to the gate thereof, oneof the source and the drain thereof is connected to the node COM1, andthe other one is connected to the node COM2. In the transistor 48, anode INV is connected to the gate thereof, one of the source and thedrain thereof is connected to the node COM1, and the other one isconnected to the node COM2. The transistors 43 and 48 serve as firstswitches that switch between an on state and an off state in accordancewith data stored in the latch circuit 210.

In the transistor 44, a node INV is connected to the gate thereof, oneof the source and the drain thereof is connected to the node COM2, andthe other one is connected to a node SRCGND. The node SRCGND isconnected to, for example, the driver 124, and transmits voltagesnecessary for the sense amplifier unit SAU, for example, a groundpotential VSS and the like. In the transistor 49, a node LAT isconnected to the gate thereof, one of the source and the drain thereofis connected to the node COM2, and the other one is connected to thenode SRCGND. The transistors 44 and 49 serve as second switches thatswitch between an on state and an off state in accordance with datastored in the latch circuit 210.

In the transistor 45, a signal HLL is input to the gate thereof, one ofthe source and the drain thereof is connected to a power supply, and theother one is connected to a node SEN. In the transistor 46, a signal XXLis input to the gate thereof, one of the source and the drain thereof isconnected to the node SEN, and the other one is connected to the nodeCOM1. In the capacitor element 58, one electrode is connected to thenode SEN, and a clock signal CLK is input to the other electrode. In thetransistor 50, a signal STBn is input to the gate thereof, one of thesource and the drain thereof is connected to a power supply, and theother one is connected to the transistor 51. In the transistor 51, thenode SEN is connected to the gate thereof, one of the source and thedrain thereof is connected to the transistor 50, and the other one isconnected to the node INV. In the transistor 47, a signal RST_N is inputto the gate thereof, one of the source and the drain thereof isconnected to the node INV, and the other one is connected to a bus LBUS.

Next, the latch circuit 210 will be described. The latch circuit 210includes low breakdown voltage n-channel MOS transistors 52 to 54 andlow breakdown voltage p-channel MOS transistors 55 to 57.

In the transistor 55, a signal RST_P is input to the gate thereof, oneof the source and the drain thereof is connected to a power supply, andthe other one is connected to the transistor 56. In the transistor 56, anode LAT is connected to the gate thereof, one of the source and thedrain thereof is connected to the transistor 55, and the other one isconnected to a node INV. In the transistor 52, the node LAT is connectedto the gate thereof, one of the source and the drain thereof isconnected to the node INV, and the other one is connected to thetransistor 53. In the transistor 53, a signal STBn is input to the gatethereof, one of the source and the drain thereof is connected to thetransistor 52, and the other one is connected to ground. In thetransistor 57, the node INV is connected to the gate thereof, one of thesource and the drain thereof is connected to the power supply, and theother one is connected to the node LAT. In the transistor 54, the nodeINV is connected to the gate thereof, one of the source and the drainthereof is connected to the node LAT, and the other one is connected toground.

In the latch circuit 210, the transistors 52 and 56 form a firstinverter, and the transistors 54 and 57 form a second inverter. The nodeINV is connected to an output of the first inverter and an input of thesecond inverter, and the node LAT is connected to an input of the firstinverter and an output of the second inverter. Therefore, in the latchcircuit 210, data is stored in the node LAT, and the inverted datathereof is stored in the node INV.

Next, operations of the first and second switches during data writingwill be briefly described with reference to FIGS. 3 and 4.

When data “0” is written in the memory cell transistor MT (when athreshold voltage is increased by the injection of charge), an “L” levelis applied to a node LAT of the latch circuit 210, and an “H” level isapplied to a node INV thereof, as illustrated in FIG. 3. As a result,the transistors 43 and 48 which are first switches are set to be in anoff state, the transistors 44 and 49 which are second switches are setto be in an on state, and a bit line BL is applied with, for example,VSS from the node SRCGND.

On the other hand, when data “1” is written to the memory celltransistor MT (when charge is not injected and a threshold voltage isnot changed), an “H” level (data “1”) is applied to the node LAT of thelatch circuit 210, and an “L” level (data “0”) is applied to the nodeINV thereof, as illustrated in FIG. 4. As a result, the transistors 43and 48 which are first switches are set to be in an on state, thetransistors 44 and 49 which are second switches are set to be in an offstate, and the bit line BL is applied with a positive voltage (forexample, a voltage obtained by clamping VDDSA by the transistor 41).

1.2 Data Write Operation

Next, a data write operation according to this embodiment will bedescribed.

1.2.1 Write Operation According to this Embodiment

First, a concept of a write operation will be described with referenceto FIG. 5, particularly focusing on a bit line BL and a potential of achannel. The write operation in this embodiment includes three steps.Hereinafter, a bit line corresponding to the memory cell transistor MTin which data “0” is written is referred to as BL (“0”), and a bit linecorresponding to the memory cell transistor MT in which data “1” iswritten is referred to as BL (“1”).

First Step

First, a first step will be described. In the first step, the senseamplifier 113 transmits a voltage to a channel within the NAND string116 through a bit line BL.

That is, in a state where the select transistor ST1 is turned on, thesense amplifier 113 applies a positive voltage VBLH1 (for example, 1.5V) to a bit line BL (“1”) and applies VSS (for example, 0 V) to a bitline BL (“0”) as described in FIGS. 2 and 3 (step S1-1). As a result, achannel potential Vch1 of the NAND string 116 corresponding to the bitline BL (“1”) is set to VBLH1, and a channel potential Vch0 of the NANDstring 116 corresponding to the bit line BL (“0”) is set to VSS (stepS1-2).

Second Step

In a second step, the potential of the bit line BL (“1”) increases bycapacitive coupling with a bit line BL (“0”), a source line SL, and aselect gate line SGD of a non-selected block BLK.

That is, in a state where the bit line BL (“1”) is electricallydisconnected from the sense amplifier 113, the potential of the sourceline SL increases to VSRC (for example, 1.5 V), the potential of the bitline BL (“0”) increases to VBLL1 (for example, 1 V), and the potentialof the select gate line SGD of the non-selected block BLK increases toVUSGD1 (for example, 0.8 V) (step S2-1). As a result, a channelpotential Vch1 increases to VBLH2 (for example, 2.5 V), and a channelpotential Vch0 increases to VBLL1 (step S2-2).

The potential of a select gate line SGD of a selected block BLK drops,and a select transistor ST1 of the NAND string 116 corresponding to thebit line BL (“1”) is set to be in a cut-off state. As a result, achannel of the NAND string 116 is in an electrically floating state, andVBLH2 of the channel potential Vch1 is trapped in the NAND string 116(step S2-3).

In addition, the potential of the bit line BL (“0”) is returned to VSS,and thus the channel potential Vch0 is set to VSS.

Third Step

In a third step, a voltage is applied to a word line WL, and thus datais written in the memory cell transistor MT.

That is, the row decoder 112 applies a program voltage VPGM (forexample, 20 V) to a selected word line WL, and applies a voltage VPASS(for example, 7V, VPGM>VPASS) to a non-selected word line WL (stepS3-1). As a result, a channel potential Vch0 maintains VSS, while achannel potential Vch1 is boosted to a voltage Vbo by coupling with aword line WL.

Thereby, electrons are injected into a charge storage layer of a memorycell transistor MT corresponding to a bit line BL (“0”), and a thresholdvoltage of the memory cell transistor MT increases. On the other hand, asmaller number of electrons than those for the memory cell transistor MTcorresponding to the bit line (“0”) is injected to a charge storagelayer of a memory cell transistor corresponding to a bit line BL (“1”)to such a degree that a threshold voltage is not made to transition, anda threshold voltage does not increase much (step S3-2).

1.2.2 Details of Write Operation

Next, the above-mentioned data write operation will be described indetail with reference to FIGS. 6 to 11.

First Step

First, a first step is started at time t1. This state is illustrated inFIG. 7. As illustrated in FIGS. 6 and 7, first, the sequencer 121 sets avoltage of a signal BLC to VBLC1 (for example, 1.5 V+Vt) (Vt is athreshold voltage of a low breakdown voltage n-channel MOS transistorwithin a sense amplifier unit SAU) at time t1. The voltage VBLC1 and apower supply voltage VDDSA supplied to the sense amplifier unit SAU havea relation of VDDSA>(VBLC1−Vt).

Thereby, the sense amplifier unit SAU applies a voltage VBLH1 (1.5 V)which is clamped by the transistor 41 to a bit line BL (“1”). Here,VBLH1 and VBLC1 have a relation of VBLH1=VBLC1−Vt. On the other hand,the sense amplifier unit SAU applies VSS, which is transmitted from anode SRCGND, to a bit line BL (“0”).

In addition, the row decoder 112 applies a voltage VSGD1 (for example,4.5 V) to a select gate line SGD of a selected block BLK to thereby seta select transistor ST1 of a selected block BLK to be in an on state.Thereby, a bit line BL transmits a voltage to the NAND string 116 of theselected block BLK. Specifically, in the selected block BLK, a voltageVBLH1 (1.5 V) is transmitted to a channel of the NAND string 116connected to the bit line BL (“1”), and VSS is transmitted to a channelof the NAND string 116 connected to the bit line BL (“0 ”). In addition,the row decoder 112 applies VSS to all select gate lines SGS of selectedand non-selected blocks BLK, and sets all select transistors ST2 to bein an off state.

Second Step

Next, a second step is started at time t2. At time t2, the sequencer 121applies VSS to a signal line BLC to thereby set the transistor 41 to bein an off state, and electrically disconnects the sense amplifier unitSAU and the bit lines BL from each other. Thereby, all of the bit linesBL and the NAND string 116 are set to be in an electrically floatingstate. In addition, the sequencer 121 applies a voltage VSRCGND1 (forexample, 1.5 V) to the node SRCGND.

Next, at time t3, the sequencer 121 sets a voltage of the signal BLC toVBLC2 (for example, 1 V+Vt). Here, VSRCGND1 and VBLC2 have a relation ofVSRCGND1>VBLC2−Vt.

The state at time t3 is illustrated in FIG. 8. The bit line BL (“0”) hasa potential of VSS at time t2 and has a relation of VSS<VBLC2−Vt. Forthis reason, the transistor 41 connected to the bit line (“0”) is set tobe in an on state. Accordingly, the sense amplifier unit SAU appliesVBLL1 (for example, 1 V, VBLL1=VBLC2−Vt) to the bit line (“0”).

On the other hand, the bit line BL (“1”) has a potential of VBLH1 attime t2, and has a relation of VBLH1>VBLC2−Vt. For this reason, thetransistor 41 which is connected to the bit line (“1”) is maintained tobe in a cut-off state. Accordingly, the bit line BL (“1”) is maintainedto be in a floating state.

In this state, the driver 124 applies a voltage VSRC (for example, 1.5V, VSRC>VSS) to a source line SL. Further, the row decoder 112 applies avoltage VUSGD1 (for example, 0.8 V, VUSGD1>VSS) to a select gate lineSGD of a non-selected block BLK. Meanwhile, when a threshold voltage ofa select transistor ST1 is set as Vt_st, it is preferable that VUSGD1 isset to have a relation of VUSGD1<Vt_st so that the select transistor ST1is not set to be in an on state.

As a result, the potential of the bit line BL (“1”) increases to avoltage VBLH2 (for example, 2.5 V, VBLH2>VBLH1) by capacitive couplingbetween a potential VBLL1 (for example, 1 V) of the bit line BL (“0”), apotential VSRC (for example, 1.5 V) of the source line SL, and apotential VUSGD1 (for example, 0.8 V) of the select gate line SGD of thenon-selected block BLK. Here, VBLH2 and VDDSA have a relation ofVBLH2>VDDSA.

In addition, since the select transistor ST1 is set to be in an onstate, a channel potential Vch0 is set as VBLL1 in the same manner asthe bit line BL (“0”). Similarly, a channel potential Vch1 is set asVBLH2 in the same manner as the bit line BL (“1”).

Next, at time t4, the row decoder 112 applies a voltage VSGD2 to aselected select gate line SGD. This state is illustrated in FIG. 9. Thevoltage VSGD2 sets the select transistor ST1 connected to the bit lineBL (“0”) to be in an on state, and sets the select transistor ST1connected to the bit line BL (“1”) to be in a cut-off state.Accordingly, VSGD2 has a relation of VBLL1+Vt_st<VSGD2<VBLH2+Vt_st.Thereby, in the selected block BLK, a channel of a NAND string 116corresponding to the bit line BL (“1”) is set to be in a floating statebecause of the select transistor ST1 being set to be in an off state,and the channel potential Vch1 is maintained to be VBLH2.

Next, at time t5, the sequencer 121 returns the potential of the nodeSRCGND to VSS. This state is illustrated in FIG. 10. Thereby, thepotential of the bit line BL (“0”) is also returned to VSS, and thechannel potential Vch0 of the corresponding NAND string 116 is also setto VSS. On the other hand, since the potential of the bit line BL (“0”)drops, the potential of the bit line BL (“1”) is set as voltage VBLH3 byinfluence of capacitive coupling. Meanwhile, a relation ofVBLH1<VBLH3≦VBLH2 is established. However, since the select transistorST1 is in an off state, the channel potential Vch1 of the NAND string116 corresponding to the bit line BL (“1”) is maintained to be VBLH2.

Third Step

Next, at time t6, a third step is started. This state is illustrated inFIG. 11. That is, at time t6, the row decoder 112 applies a voltageVPASS (for example, 7 V) to a selected word line WL and a non-selectedword line WL. The voltage VPASS prevents erroneous writing in anon-selected memory cell transistor MT during writing while setting amemory cell transistor MT to be in an on state, regardless of athreshold voltage of the memory cell transistor MT. Then, the channelpotential Vch1 increases to a voltage Vbo by coupling with the word lineWL.

Next, at time t7, the row decoder 112 applies a voltage VPGM (forexample, 20V) to a selected word line WL. The voltage VPGM is a highpositive voltage for injecting charge into a charge storage layer, andhas a relation of VPGM>VPASS. Thereby, in a memory cell transistor MT,which is a target for writing of “0”, connected to the selected wordline WL, charge is injected into the charge storage layer. On the otherhand, in a memory cell transistor MT, which is a target for writing of“1”, connected to the selected word line WL, the channel potential Vch1further increases by coupling with VPGM, and thus charge is not injectedinto the charge storage layer.

Thereafter, a recovery operation is performed between time t8 and timet9, and each conductive line is reset.

1.3 Effects According to this Embodiment

In the configuration according to this embodiment, it is possible toimprove the reliability of a write operation. The effects will bedescribed below.

During data writing, an “H”-level voltage is applied to a bit line BL(“1”). Thereby, the corresponding select transistor ST1 is set to be ina cut-off state, a channel potential of the NAND string 116 is set to bein a floating state. Accordingly, when VPGM is applied to a selectedword line WL, a channel potential Vch1 of the NAND string 116 increasesby capacitive coupling, and thus charge is not injected into a chargestorage layer of a memory cell transistor MT. This is known as aself-boosting technique.

However, in recent mobile devices such as a mobile phone, a power supplyvoltage has become lower. The above-mentioned “H”-level voltage isgenerated by dropping a power supply voltage. For this reason, when thepower supply voltage becomes lower, an “H”-level voltage also becomeslower. When the power supply voltage is 3.0 V, the voltage of an “H”level is set as, for example, approximately 2.5 V. On the other hand, inthe case of a low voltage operation type NAND type flash memory 100 thatoperates at a power supply voltage of 1.8 V, the voltage of an “H” levelis set as, for example, approximately 1.5 V.

In the self-boosting technique, a channel potential Vch1 increases up toa potential Vbo by coupling with a word line WL based on theabove-mentioned potential of an “H” level. Accordingly, when thepotential of an “H” level drops in association with a drop in the powersupply voltage, a reference potential of channel boosting also drops,and thus there is a possibility that the potential Vbo also drops duringwriting. As a result, a potential difference between a control gate anda channel becomes larger, and thus there is a possibility of erroneouswriting occurring. In addition, when an “H”-level voltage becomes lower,a voltage difference from a select gate line SGD is reduced. For thisreason, a select transistor ST1 of the NAND string 116 corresponding towriting of “1” is set to be in an on state, and thus erroneous writingmay occur.

In order to suppress the occurrence of erroneous writing, for example, amethod of generating an “H”-level voltage higher than a power supplyvoltage using a charge pump is considered. However, when a page lengthfor writing data is, for example, 16 kilobytes, the bit line capacitythereof is set as approximately several hundreds of nF, and thus currentconsumption for boosting using a charge pump is also set as, forexample, several tens of mA. Further, since it is necessary to newlyprovide a charge pump for supplying a voltage to a sense amplifier unitSAU, a chip area is increased to that extent.

On the other hand, in this embodiment, potentials of a bit line BL(“0”), a source line SL, and a select gate line SGD of a non-selectedblock BLK are increased, and a voltage (“H”-level voltage) of a bit lineBL (“1”) is made to be higher than a power supply voltage by capacitivecoupling with the plurality of conductive lines. Further, thereafter,the boosted “H”-level voltage is trapped in a channel by controlling thevoltage of the select gate line SGD. That is, when a channel potentialis increased by coupling with a word line WL, it is possible tosufficiently increase the original voltage. Thereby, a channel potentialVch1 of the NAND string 116 corresponding to a bit line (“1”) beforeVPASS and VPGM are applied to a word line WL may be made to be higherthan a power supply voltage. As a result, it is possible to sufficientlyincrease the potential to Vbo by a self-boosting technique and to morereliably cut off a select transistor ST1 corresponding to a bit line BL(“1”). Accordingly, erroneous writing is suppressed, and thus it ispossible to improve the reliability of a write operation.

Further, in this embodiment, potentials of a source line SL and a selectgate line SGD of a non-selected block BLK are also increased, inaddition to a potential of a bit line BL (“0”). Thereby, it is possibleto increase a potential of a bit line BL (“1”) regardless of a datapattern. For example, as a capacitive component of the bit line BL, anadjacent capacitance between bit lines BL is dominant, but a capacitancebetween the bit line and a source line SL and a capacitance between thebit line and a select gate line SGD of a non-selected block BLK accountfor approximately 10%. For example, when all bits of page data to bewritten are “1”, an “H” level is applied to all of the bit lines BL. Forthis reason, the adjacent capacitance between the bit lines is notobserved effectively, and a capacitance between the bit line and thesource line SL and a capacitance between the bit line and the selectgate line SGD of the non-selected block BLK become dominant.Accordingly, it is possible to secure a bit line boosting level that isnot dependent upon a data pattern by using capacitive coupling with thesource line SL or the select gate line SGD of the non-selected blockBLK.

Further, since an “H”-level voltage may be boosted to a voltage higherthan a power supply voltage without using a charge pump, it is thuspossible to suppress an increase in current consumption and a chip area.

2. Second Embodiment

Next, a semiconductor memory device according to a second embodimentwill be described. The present embodiment is obtained by applying thefirst embodiment to a three-dimensional stacked NAND type flash memory.Hereinafter, only differences from the first embodiment will bedescribed.

2.1 Configuration of Memory Cell Array

First, the configuration of a memory cell array 111 according to thisembodiment will be described with reference to FIG. 12. FIG. 12 is acircuit diagram of any one of blocks BLK within the memory cell array111.

As illustrated in the drawing, each of blocks BLK according to thisembodiment includes a plurality of (four in this example) string unitsSU (SU0 to SU3). Each of the string units SU is configured in the samemanner as the block BLK described in the first embodiment with referenceto FIG. 1. In other words, it may be said that one block BLK of thethree-dimensional stacked NAND type flash memory is a set of a pluralityof blocks BLK in a flat NAND type flash memory in which memory celltransistors MT are two-dimensionally arrayed. In addition, data writingand data reading are performed in page units in the same manner as aflat NAND type flash memory. In this embodiment, pieces of data arecollectively written or read with respect to a plurality of memory celltransistors MT connected in common to any one of word lines WL in anystring unit SU as a page. Meanwhile, unlike FIG. 1, in the exampleillustrated in FIG. 12, the number of memory cell transistors includedin one NAND string 116 is eight, but is not of course limited to eight.

In each block BLK, word lines WL0 to WL7 and a select gate line SGS areconnected in common to four string units SU0 to SU3. On the other hand,a select gate line SGD is independently provided for each string unitSU, gates of select transistors ST1 of the string units SU0 to SU3 areconnected to select gate lines SGD0 to SGD3, respectively.

Next, a cross-sectional configuration of the memory cell array 111according to this embodiment will be described with reference to FIG.13.

As illustrated in the drawing, a plurality of NAND strings 116 areformed on a p-type well 22 formed in the surface of a semiconductorsubstrate. That is, a plurality of wiring layers 25 functioning asselect gate lines SGS, a plurality of wiring layers 23 functioning asword lines WL, and a plurality of wiring layers 24 functioning as selectgate lines SGD are formed on the p-type well 22.

A memory hole 26 of which the side surface comes into contact with thewiring layers 23 to 25 and of which the bottom reaches the p-type well22 is formed. A block insulating film 27, a charge storage layer 28, anda tunnel insulating film 29 are sequentially formed on the side surfaceof the memory hole 26. Further, a semiconductor layer 30 is embedded inthe memory hole 26. The semiconductor layer 30, functioning as a currentpath of the NAND string 116, is a region where a channel is formedduring operation of memory cell transistors MT and select transistorsST1 and ST2.

In each NAND string 116, a plurality of (four in this example) wiringlayers 25 are electrically connected in common to the same select gateline SGS. That is, the four wiring layers 25 actually function as gateelectrodes of one select transistor ST2. The same is true of the wiringlayers 24. Four wiring layers 24 are connected to the same select gateline SGD, and actually function as gate electrodes of one selecttransistor ST1. Meanwhile, the number of wiring layers 24 and the numberof wiring layers 25 may be one or more, and are not limited thereto.

With the above-mentioned configuration, in each NAND string 116, theselect transistor ST2, the plurality of memory cells transistor MT, andthe select transistor ST1 are sequentially stacked on the p-type well22.

Meanwhile, in the example of FIG. 13, the select transistors ST1 and ST2include a charge storage layer 28 in the same manner as the memory celltransistor MT. However, the select transistors ST1 and ST2 do notfunction as memory cells that actually store data, and function asswitches. A threshold voltage for turning on and turning off the selecttransistors ST1 and ST2 may be controlled by injecting charge into thecharge storage layer 28.

A wiring layer 31 functioning as a bit line BL is formed on the memoryhole 26, and is connected to the semiconductor layer 30.

Further, an n⁺-type impurity diffusion layer 32 and a p⁺-type impuritydiffusion layer 33 are formed in the surface of the p-type well 22. Acontact plug 34 is formed on the diffusion layer 32, and a wiring layer35 functioning as a source line SL is formed on the contact plug 34. Inaddition, a contact plug 36 is formed on the diffusion layer 33, and awiring layer 37 functioning as a well wiring CPWELL is formed on thecontact plug 36. The wiring layers 35 and 37 are formed in layers whichare located above the select gate line SGD and below the wiring layer31.

The plurality of above-mentioned configurations are arrayed in the depthdirection of the sheet of FIG. 13, and a string unit SU includes a setsof a plurality of NAND strings 116 lined up in the depth direction. Inaddition, the wiring layers 25 functioning as a plurality of select gatelines SGS included in the same string unit SU are connected in common toeach other. The tunnel insulating film 29 is also formed on the p-typewell 22 between the adjacent NAND strings 116, and the wiring layer 25and the tunnel insulating film 29 which are adjacent to the diffusionlayer 32 are formed up to the edge of the diffusion layer 32.

Accordingly, when charge is supplied to the semiconductor layer 30 fromthe diffusion layer 32, an n-channel is formed in the memory celltransistors MT and the select transistors ST1 and ST2, and thetransistors operate as n-channel transistors.

Alternatively, the configuration of the memory cell array 111 may be asdisclosed in, for example, U.S. patent application Ser. No. 12/407,403,filed on Mar. 19, 2009, which is entitled “THREE-DIMENSIONAL STACKEDNONVOLATILE SEMICONDUCTOR MEMORY,” U.S. patent application Ser. No.12/406,524, filed on Mar. 18, 2009, which is entitled “THREE-DIMENSIONALSTACKED NONVOLATILE SEMICONDUCTOR MEMORY,” U.S. patent application Ser.No. 12/679,991, filed on Mar. 25, 2010, which is entitled “NONVOLATILESEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF,” and U.S.patent application Ser. No. 12/532,030, filed on Mar. 23, 2009, which isentitled “SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF.” Theentire contents of these patent applications are incorporated byreference herein.

2.2 Write Operation

Next, a write operation in this embodiment will be described withreference to FIG. 14A. The write operation of this embodiment issubstantially the same as FIGS. 5 to 11 described in the firstembodiment. However, this embodiment is different from the firstembodiment in that a voltage of a well wiring CPWELL also contributes tothe boosting of a bit line BL (“1”) in a second step.

As illustrated in the drawing, the driver 124 applies VSRC (for example,1.5 V) to the well wiring CPWELL between time t3 and time t9.

As a result, at time t3, a potential of a bit line BL (“1”) increasesnot only by influence from a bit line BL (“0”), a source line SL, and aselect gate line SGD of a non-selected block BLK but also by capacitivecoupling with the well wiring CPWELL, and is set to VBLH2 (for example,2.5 V). For this reason, a channel potential Vch0 is also set to VBLH2.

Meanwhile, VSS is applied to select gate lines SGD and SGS of anon-selected string unit SU in a selected block BLK between time t1 andtime t9.

According to FIG. 14B, VSGD may be applied to select gate lines SGD of anon-selected string unit SU in a selected block BLK between t1 to t4.VSS may be applied to select gate lines SGS of a non-selected stringunit SU in a selected block BLK between time t1 and time t4.

2.3 Effects According to this Embodiment

According to the configuration according to this embodiment, the sameeffects as those in the first embodiment mentioned above are obtainedeven in a three-dimensional stacked NAND type flash memory.

In addition, in the configuration according to this embodiment, apotential of a bit line BL (“1”) is increased not only using influencefrom a bit line BL (“0”), a source line SL, and a select gate line SGDof a non-selected block BLK but also using capacitive coupling with awell wiring CPWELL. Naturally, also in this embodiment, the bit line BL(“1”) may be increased by influence from a bit line BL (“0”), a sourceline SL, and a select gate line SGD of a non-selected block BLK withoutusing the well wiring CPWELL, in the same manner as in the firstembodiment. However, it is possible to increase the potential of the bitline BL (“1”) at a higher speed and up to a more sufficient potential byusing the well wiring CPWELL together

3. Third Embodiment

Next, a semiconductor memory device according to a third embodiment willbe described. In this embodiment, the writing of data “0” in the firstand second embodiments is performed by combining a plurality of writingconditions having different variations in a threshold voltage.Hereinafter, only differences from the first and second embodiments willbe described.

3.1 Write Operation

First, a write operation in this embodiment will be broadly described.The write operation according to this embodiment includes a first writeoperation and a second write operation. Each write operation includes aprogramming operation of increasing a threshold voltage by injectingelectrons into a charge storage layer and a verifying operation ofdetermining whether or not the threshold voltage reaches a target valueas a result of the programming operation.

A sequencer 121 performs a first write operation before a thresholdvoltage of a memory cell transistor reaches a first verification levelVL1 after a write operation is started. In the first write operation,data is programmed (hereinafter, referred to as a “first programmingoperation”) using a writing condition having a relatively largevariation in threshold voltage (hereinafter, referred to as a “firstcondition”).

When the threshold voltage of the memory cell transistor reaches thefirst verification level VL1, the sequencer 121 performs a second writeoperation. In the second write operation, data is programmed(hereinafter, referred to as a “second programming operation”) under acondition having a smaller variation in threshold voltage than that ofthe first programming (referred to as a “second condition”). Inaddition, in the second writing, a second verification level VL2 higherthan the first verification level is used.

Next, a manner in which a threshold voltage varies through the first andsecond write operations will be described with reference to FIGS. 15Aand 15B. FIG. 15A shows the first programming operation, and FIG. 15Bshows the second programming operation.

In the example on FIG. 15A, the sequencer 121 performs a firstprogramming operation three times. Specifically, for the first andsecond program steps, the sequencer 121 performs a first programmingoperation on all memory cell transistors MT because threshold voltagesof all of the memory cell transistors MT are less than the firstverification level VL1. For a third program step, the first programmingoperation is performed on the memory cell transistor MT having athreshold voltage less than the first verification level VL1, and asecond programming operation is performed on the memory cell transistorMT having a threshold voltage equal to or greater than the firstverification level VL1 and less than the second verification level VL2.

In other words, the first programming operation and the secondprogramming operation are simultaneously performed within one page whichis a target for writing. Specifically, a sense amplifier 113 applies,for example, VSS to a bit line BL corresponding to a memory celltransistor MT having a threshold voltage less than the firstverification level VL1, and applies a voltage higher than VSS to a bitline BL corresponding to a memory cell transistor MT having a thresholdvoltage equal to or greater than the first verification level VL1 andless than the second verification level VL2. As a result of the thirdprogram step, it is assumed that threshold voltages of all of the memorycell transistors MT will be equal to or greater than the firstverification level VL1.

FIG. 15B shows a state of a variation in threshold voltage through afourth program step and the subsequent program steps. As illustrated inthe drawing, it is assumed that threshold voltages of some memory celltransistors MT are equal to or greater than the second verificationlevel VL2 through the fourth program step.

For a fifth program step, the second programming step is continuouslyperformed on a memory cell transistor MT having a threshold voltage lessthan the second verification level VL2. On the other hand, a non-writingvoltage is applied to a bit line BL corresponding to a memory celltransistor MT having a threshold voltage equal to or greater than thesecond verification level VL2, and thus programming on the memory celltransistor MT is prohibited. The same is true for a sixth program step.As a result of the sixth program step, when threshold voltages of allmemory cell transistors MT which are targets for writing are equal to orgreater than the second verification level VL2, writing from a level “1”to a level “0” is completed. Meanwhile, when a variation in thresholdvoltage through writing using a first condition is set to ΔVT1 and avariation in threshold voltage through writing using a second conditionis set to ΔVT2, ΔVT1 and ΔVT2 has a relation of ΔVT1>ΔVT2.

In this manner, in the write operation in this embodiment, when acurrent threshold voltage of a memory cell transistor MT which is atarget for writing greatly deviates from a target threshold level,programming is performed using a condition having a large (rough)variation in threshold voltage. The current threshold voltage of thememory cell transistor MT approaches the target threshold voltage,programming is performed using a condition having a small (fine)variation in threshold voltage.

3.2 Details of Write Operation

Next, a write operation in this embodiment will be described in detailwith reference to FIG. 16. FIG. 16 corresponds to the flow chart of FIG.5 described in the first embodiment, and only differences from FIG. 5will be described below. Meanwhile, in the following description, a bitline BL corresponding to a memory cell transistor having data “0”written therein and a channel potential of the NAND string 116 thereofare written as BL (“0”) and Vch0, respectively, during the first writeoperation, and are written as BL (“QPW”) and Vch_QPW, respectively,during the second write operation. Regarding the writing of “1”, the bitline and the channel potential are written as BL (“1”) and Vch1,respectively, during any operation.

As illustrated in FIG. 16, a write operation includes first to thirdsteps in the same manner as in the first embodiment.

First Step

The first step is the same as that in the first embodiment. Similarly toBL (“0”), VSS (for example, 0 V) is applied to BL (“QPW”) from the senseamplifier 113 (step S1-1′), and Vch_QPW is also set to VSS (step S1-2′).

Second Step

The second step is also the same as that in the first embodiment.Similarly to BL (“0”), a positive voltage VBLL1 is applied to BL (“QPW”)from the sense amplifier 113 (step S2-1′), and Vch_QPW is also set toVBLL1 (step S2-2′).

Regarding Third Step

Unlike the first embodiment, in the third step, the sense amplifier 113applies a positive voltage VBLL2 (for example, 0.5 V, VSS<VBLL2<VSGD2)to a bit line BL (“QPW”) (step S3-1′). As a result, Vch_QPW is also setas VBLL2. Data is programmed in this state (step S3-2).

Next, the above-mentioned variations in the voltage of each conductiveline during a data write operation will be described with reference toFIG. 17. FIG. 17 corresponds to FIG. 6 in the first embodiment, and adescription will be given below focusing on only differences from thefirst embodiment.

First and Second Steps

A potential of a bit line BL (“QPW”) and a channel potential Vch_QPW inthe first and second steps (times t1 to t6) are the same as a potentialof a bit line BL (“0”) and a channel potential Vch0. This is the same asthat in the first embodiment, and thus a description thereof will beomitted here.

Third Step

In the third step, first, data stored in a latch circuit 210 of a senseamplifier unit SAU that performs the second programming operation isinverted at time t6. Specifically, the sequencer 121 sets a voltage of asignal BLC as VSS and sets a transistor 41 to be in an off state. Thesequencer 121 gives an “H” level (data “1”) to a node LAT of the latchcircuit 210, and gives an “L” level (data “0”) to a node INV. Thereby,in the sense amplifier unit SAU described in FIG. 5, a first switch isset to be in an on state, and a second switch is set to be in an offstate. Accordingly, at time t6 and the subsequent times, a positivevoltage obtained by clamping VDDSA by the transistor 41 is applied tothe bit line BL (“QPW”), in the same manner as the bit line BL (“1”).

Next, at time t7, the sequencer 121 sets a voltage of the signal BLC asVBLC3 (for example, 0.5 V+Vt, VBLC3<VBLC2). Thereby, the sense amplifierunit SAU performing the second programming operation applies a voltageVBLL2 (for example, 0.5 V) to the bit line BL (“QPW”). At this time, thevoltage VBLL2 is set to be higher than a voltage VSS of the bit line BL(“0”), and is set to be lower than a voltage VSGD2-Vt so that a selecttransistor ST1 is set to be in an on state. Since the select transistorST1 is set to be in an on state, a channel potential Vch_QPW is set toVBLL2 transmitted from the bit line BL (“QPW”). In addition, in a senseamplifier unit SAU that writes “1”, a potential VBLH3 of the bit line BL(“1”) is higher than VBLC3, and thus the transistor 41 is set to be in acut-off state.

Next, as described in times t6 to t8 of FIG. 6, the row decoder 112applies VPASS to a non-selected word line WL and sequentially appliesVPASS and VPGM to a selected word line WL between time t8 and time t10.Thereby, in a memory cell transistor MT which is a target for the firstand second programming operations, charge is injected into a chargestorage layer. At this time, the channel potential Vch_QPW is higherthan the channel potential Vch0. For this reason, in the secondprogramming operation, the amount of charge injected into the chargestorage layer is smaller than that in the first programming operation,and thus a variation in threshold voltage is reduced.

Next, a recovery operation is performed between time t10 and time t11,and writing is terminated.

3.3 Effects According to this Embodiment

In the configuration according to this embodiment, the same effects asin the first and second embodiments mentioned above are obtained.

Further, in the configuration according to this embodiment, when athreshold voltage of a memory cell transistor MT greatly deviates from atarget level, the first programming operation is performed to increase avariation in threshold voltage. Thereby, it is possible to reduce thenumber of programming loops. Accordingly, it is possible to improve aprocessing speed during writing.

Further, when a threshold voltage of a memory cell transistor MT isclose to a target level, the second programming operation is performedto reduce a variation in threshold voltage. In this manner, it ispossible to finely control a threshold voltage by changing a variationin threshold voltage, and thus writing may be performed so as to reducea distribution width of the threshold voltage. Accordingly, it ispossible to improve reliability during writing.

In addition, the third embodiment may also be applied to the secondembodiment. Further, in this embodiment, a case where data is written bywrite operations (first and second write operations) using two writingconditions has been described as an example, but three or more writingconditions may be used.

4. Fourth Embodiment

Next, a semiconductor memory device according to a fourth embodimentwill be described. This embodiment is configured such that potentials ofchannels of all NAND strings 116 of a selected block BLK increase bycapacitive coupling at the initial stage of writing in the secondembodiment. Hereinafter, only differences from the second embodimentwill be described.

4.1 Write Operation According to this Embodiment

First, a concept of a write operation will be described with referenceto FIG. 18. FIG. 18 corresponds to FIG. 5 described in the firstembodiment, and a description will be given below focusing on onlydifferences from the first and second embodiments. Hereinafter, achannel potential of a NAND string 116 of a non-selected string unit SUof a selected block BLK will be referred to as Vch_NSU.

0-th Step

In this embodiment, a 0-th step is performed before a first step. In the0-th step, first, a sense amplifier 113 transmits a positive voltageVBLH1 to channels of all NAND strings 116 of a selected block BLKthrough all bit lines BL. That is, in a state where select transistorsST1 of all string units SU of a selected block BLK are set to be turnedon, the sense amplifier 113 applies the positive voltage VBLH1 to allbit lines BL (step S0-1).

In a state where all of the bit lines BL are electrically disconnectedfrom the sense amplifier 113, a potential of a select gate line SGD of anon-selected block BLK increases to VUSGD1 (step S0-2).

As a result, potentials of all bit lines increase to VBLH2 by capacitivecoupling with a select gate line SGD of a non-selected block BLK. All ofchannel potentials Vch0, Vch1, and Vch_NSU of a selected block BLKincrease to VBLH2 (step S0-3).

First to Third Steps

Operations in first to third steps are substantially the same as thosein FIG. 5. The difference is in that a channel potential Vch_NSU boostedby capacitive coupling is maintained to be VBLH2 because a channel of anon-selected SU of a selected block BLK is set to be in a floating statein the first to third steps.

4.2 Details of Write Operation

Next, a change in a voltage of each conductive line during writing inthis embodiment will be described with reference to FIG. 19. FIG. 19corresponds to FIG. 14A described in the second embodiment, and adescription will be given below focusing on only differences from thesecond embodiment.

0-th Step

As illustrated in the drawing, a 0-th step is performed between time t1and time t5. First, at time t1, the sequencer 121 sets a voltage of asignal BLC to VBLC1 (for example, 1.5 V+Vt). In addition, a voltageVSRCGND0 (>1.5 V) is applied to a node SRCGND. The voltage VSRCGND0 ishigher than VBLC1−Vt, and may have the same potential as, for example,VDDSA.

Thereby, a sense amplifier unit SAU applies a voltage VBLH1 (1.5 V)clamped by a transistor 41 is applied to all bit lines BL.

A row decoder 112 applies a voltage VSGD1 (for example, 4.5 V) to allselect gate lines SGD of a selected block BLK. On the other hand, therow decoder 112 applies VSS of a select gate line SGD of a non-selectedblock BLK. Thereby, all select transistors ST1 within the selected andnon-selected string units of the selected block BLK are set to be in anon state. As a result, channel potentials Vch0 and Vch1 of a selectedstring unit SU and a channel potential Vch_NSU of a non-selected stringunit SU are set to VBLH1 (1.5 V).

Next, at time t2, the sequencer 121 sets a voltage of a signal BLC asVSS. Thereby, the transistor 41 is set to be in an off state, and allbit lines BL are set to be in a floating state.

A driver 124 applies a voltage VSRC (for example, 1.5 V) to a sourceline SL. In addition, the row decoder 112 applies a voltage VUSGD1 (forexample, 0.8 V) to a select gate line SGD of a non-selected block BLK.

Thereby, potentials of all bit lines BL increase to a voltage VBLH2 (forexample, 2.5 V) by capacitive coupling with the potential VSRC (1.5 V)of the source line SL and the potential VUSGD1 (0.8 V) of the selectgate line SGD of the non-selected block BLK. Since a select transistorST1 is set to be in anon state, channel potentials Vch0, Vch1, andVch_NSU of a selected block BLK are set as VBLH2 in the same manner asthe bit line BL.

Next, at time t3, the row decoder 112 applies VSS to a select gate lineSGD corresponding to a non-selected string unit SU of a selected blockBLK, and sets the select transistor ST1 to be in an off state. Thereby,a NAND string 116 of the non-selected string unit SU is set to be in afloating state.

Next, at time t4, the sequencer 121 sets a voltage of a signal BLC toVBLC1 (for example, 1.5 V+Vt).

In addition, the driver 124 applies a voltage VSS to the source line SL.Further, the row decoder 112 applies a voltage VSS to the select gateline SGD of the non-selected block BLK. Then, potentials of all bitlines BL are set as VBLH1 (for example, 1.5 V) by the influence ofcapacitive coupling.

At this time, since the select transistor ST1 is set to be in an onstate, channel potentials Vch0 and Vch1 of the selected string unit SUin the selected block BLK are set as VBLH1 (for example, 1.5 V) which isthe same as that of the bit line BL. On the other hand, since the selecttransistor ST1 is set to be in an off state, a channel potential Vch_NSUof the non-selected string unit SU in the selected block BLK ismaintained to be VBLH2 (for example, 2.5 V).

First to Third Steps

The first to third steps are substantially the same as those in FIG. 14Adescribed in the second embodiment. Here, the channel potential Vch_NSUof the non-selected string unit SU in the selected block BLK aremaintained to be in a floating state between time t3 and time t13.Accordingly, the channel potential Vch_NSU is maintained to be VBLH2(for example, 2.5 V) during the first to third steps, and increases toVbo by channel boosting between time t10 and time t11.

4.2 Effects According to this Embodiment

In the configuration according to this embodiment, the same effects asthose in the second embodiment are obtained.

In addition, in this embodiment, the channel potential Vch_NSU of thenon-selected string unit SU is set to be higher than a voltage suppliedfrom the sense amplifier unit SAU, in the same manner as the channelpotential Vch1. Thereby, it is possible to suppress erroneous writing ina memory cell transistor MT within the non-selected string unit SU.Accordingly, it is possible to improve the reliability of a writeoperation.

Meanwhile, in this example, a description is given of an example inwhich the channel potential Vch_NSU and the channel potential Vch1 areequal to each other (VBLH2) when VPASS and VPGM are applied to aselected word line, but these channel potentials may be different fromeach other. That is, a potential which is charged in a channel of a NANDstring 116 of a non-selected string unit SU at time t2 may be differentfrom a potential charged in a channel of a NAND string 116 of a selectedstring unit SU which is a target for writing of “1” at time t7, or bothof the potentials may be higher than VSS.

Further, a voltage of the source line SL which is applied at time t2 maybe different from a voltage of the source line SL which is applied attime t7. Similarly, a voltage of the select gate line SGD of thenon-selected block BLK which is applied at time t2 may be different froma voltage of the select gate line SGD of the non-selected block BLK attime t7. It is possible to appropriately set which values the voltagesare set as, in consideration of the influence of capacitive coupling.

5. Modification Example and the Like

The semiconductor memory device according to the above-mentionedembodiment includes a first block BLK (block BLK0 of FIG. 1) including afirst NAND string 116 (NAND string 116 of the block BLK0 of FIG. 1) thatincludes a first memory cell transistor MT (memory cell transistor MT0of the block BLK0 of FIG. 1) and a first select transistor ST1 (selecttransistor ST1 of the block BLK0 of FIG. 1), a second block BLK (blockBLK1 of FIG. 1) including a second NAND string 116 (NAND string 116 ofthe block BLK1 of FIG. 1) that includes a second memory cell transistorMT (memory cell transistor MT0, not shown in the drawing, of the blockBLK1 of FIG. 1) and a second select transistor ST1 (select transistorST1, not shown in the drawing, of the block BLK1 of FIG. 1), first andsecond select gate lines (select gate lines SGD0 and SGD1 of FIG. 1), afirst bit line BL (bit line BL0 of FIG. 1), and a first sense amplifierunit SAU (sense amplifier unit SAU of FIG. 1). A first select gate lineSGD is connected to the first select transistor ST1. A second selectgate line SGD is connected to the second select transistor ST1. Thefirst and second NAND strings 116 are connected in common to the firstbit line BL. The first bit line BL is connected to the first senseamplifier unit SAU. During the writing of data in the first memory celltransistor MT, a first voltage (VSGD1 of FIG. 6) for setting the firstselect transistor ST1 to be in an on state is applied to the firstselect gate line SGD and a voltage of the second select gate line SGDincreases to a second voltage (VUSGD1 of FIG. 6) in a state where thefirst sense amplifier unit SAU and the first bit line BL areelectrically disconnected from each other. After the voltage of thesecond select gate line SGD increases to the second voltage (VUSGD1 ofFIG. 6), a third voltage (VSGD2 of FIG. 6) which is lower than the firstvoltage is applied to the first select gate line SGD.

It is possible to provide a semiconductor memory device capable ofimproving the reliability of a write operation by applying theabove-mentioned embodiment. Meanwhile, the embodiment is not limited tothe above-mentioned mode, and may be modified in various ways.

For example, in the above-mentioned embodiment, a potential of a channelof a NAND string 116 of a non-selected block BLK may be increased beforeVUSGD1 is applied to a select gate line SGD of the non-selected blockBLK. This example is illustrated in FIG. 20.

As illustrated in the drawing, at a first step (time t1), the rowdecoder 112 applies a voltage VUSGD0 (for example, 1.5 V+Vt_st) to aselect gate line SGD of a non-selected block BLK. The voltage VUSGD0,which is a voltage applied to the select gate line SGD of thenon-selected block BLK, has a relation of VUSGD0>VUSGD1, and may be thesame voltage as, for example, VSGD1 (for example, 4.5 V). Thereby, aselect transistor ST1 of the non-selected block BLK is set to be in anon state, and a channel potential of a NAND string 116 connected to abit line BL (“1”) in the non-selected block BLK increases to 1.5 V whichis the same as a channel potential Vch1 of the NAND string 116 connectedto the bit line BL (“1”) in a selected block BLK. Thereby, at time t3,when VUSGD1 (for example, 0.8 V) is applied to the select gate line SGDof the non-selected block BLK, it is possible to suppress the erroneousoperation of the select transistor ST1 corresponding to writing of “1”in the non-selected block BLK.

In addition, it is possible to use, for example, a voltage sense typesense amplifier for the above-mentioned embodiment. In this case, asense amplifier unit SAU is provided for every two bit lines BL of aneven bit line BLe and an odd bit line BLo. Accordingly, a potential of abit line BL which is not electrically connected to the sense amplifierunit SAU is appropriately set, and thus capacitive coupling between abit line BL which is electrically connected to the sense amplifier unitSAU and a bit line BL which is not connected thereto may be used.

The above-mentioned embodiment may also be applied to athree-dimensional stacked NAND type flash memory which is different fromthat in the second embodiment. For example, a configuration may beadopted in which a semiconductor layer of a NAND string 116 is aU-shaped layer toward the upper side of a semiconductor substrate, or aconfiguration may be adopted in which NAND strings 116 each of whichincludes memory cell transistors MT being arrayed in a planar directionof a semiconductor substrate are sequentially stacked toward the upperside of a semiconductor substrate.

Further, the term “connection” in the above-mentioned embodiment alsoincludes indirect connection through something else, for example, atransistor or a resistor.

Meanwhile, the embodiments related to the invention may be as follows.

1) In a read operation,

A time (tR) of a read operation may be in a range between, for example,25 μs and 38 μs, 38 μs and 70 μs, or 70 μs and 80 μs.

(2) A write operation includes a programming operation and a verifyingoperation as described above. In the write operation,

a voltage which is first applied to a selected word line during theprogramming operation is in a voltage between, for example, 13.7 V and14.3V. However, the exemplary embodiment is not limited thereto, and thevoltage may be in a range between, for example, 13.7 V and 14.0 V or14.0 V and 14.6 V.

A voltage which is first applied to a selected word line when anodd-numbered word line is written may be changed with a voltage which isfirst applied to a selected word line when an even-numbered word line iswritten.

When the programming operation is performed using an incremental steppulse program (ISPP) method, for example, approximately 0.5 V is used asa step-up voltage.

A voltage which is applied to a non-selected word line may be in a rangebetween, for example, 6.0 V and 7.3 V. The exemplary embodiment is notlimited to this case, and the voltage may be in a range between, forexample, 7.3 V and 8.4 V or may be set to be equal to or less than 6.0V.

A path voltage to be applied may be changed according to whether anon-selected word line is an odd-numbered word line or an even-numberedword line.

A time (tProg) of the write operation may be in a range between, forexample, 1,700 μs and 1,800 μs, 1,800 μs and 1,900 μs, or 1,900 μs andto 2,000 μs.

(3) In an erasing operation,

a voltage first applied to a well which is formed in an upper portion ofa semiconductor substrate and has the above-mentioned memory cell formedthereon is in a range between, for example, 12 V and 13.6 V. Theexemplary embodiment is not limited to this case, and the voltage may bein a range between, for example, 13.6 V and 14.8 V, 14.8 V and 19.0 V,19.0 and 19.8 V, or 19.8 V and 21 V. A time (tErase) of the erasingoperation may be in a range between, for example, 3,000 μs and 4,000 μs,4,000 μs and 5,000 μs, or 4,000 μs and 9,000 μs.

4) The memory cell has a structure in which

a charge storage layer is arranged on a semiconductor substrate (siliconsubstrate) through a tunnel insulating film having a film thickness of 4nm to 10 nm. The charge storage layer may have a stacked structure of aninsulating film such as SiN or SiON which has a film thickness of 2 nmto 3 nm and polysilicon having a film thickness of 3 nm to 8 nm. Inaddition, a metal such as Ru may be added to polysilicon. An insulatingfilm may be provided on the charge storage layer. For example, theinsulating film includes a silicon oxide film having a film thickness of4 nm to 10 nm which is interposed between a lower High-k film having afilm thickness of 3 nm to 10 nm and an upper High-k film having a filmthickness of 3 nm to 10 nm. Examples of the High-k film include HfO andthe like. In addition, the silicon oxide film may have a film thicknesslarger than that of the High-k film. A control electrode having a filmthickness of 30 nm to 70 nm is formed on the insulating film through amaterial which has a film thickness of 3 nm to 10 nm. Here, such amaterial is a metal oxide film such as TaO or a metal nitride film suchas TaN. Here, W or the like may be used as the control electrode.

In addition, an air gap may be formed between memory cells.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor memory device comprising: a firstblock including a first memory string and a second memory string, thefirst memory string including a first memory cell transistor and a firstselect transistor, the second memory string including a second memorycell transistor and a second select transistor; a first select gate linethat is electrically connected to a gate of the first select transistor;a second select gate line that is electrically connected to a gate ofthe second select transistor; and a first bit line electricallyconnected to a first end of the first memory string and a first end ofthe second memory string, wherein during writing of data to a firstmemory cell transistor in the first block, a first voltage is applied tothe first select gate line during a first time period, a second voltageis applied to the second select gate line and a non-zero voltage isapplied to the first bit line, during a second time period, and a thirdvoltage lower than the second voltage is applied to the second selectgate line and a zero voltage is applied to the first bit line during athird time period that begins after the second time period.
 2. Thedevice according to claim 1, further comprising: a first word line thatis electrically connected to gates of the first memory cell transistorand the second memory cell transistor.
 3. The device according to claim1, wherein the first block further includes a third memory string thatincludes a third memory cell transistor and a third select transistor,and a fourth memory string that includes a fourth memory cell transistorand a fourth select transistor, the device further comprising: a thirdselect gate line that is electrically connected to a gate of the thirdselect transistor; a fourth select gate line that is electricallyconnected to a gate of the fourth select transistor; and a second bitline electrically connected to a first end of the third memory stringand a first end of the fourth memory string, wherein during writing ofdata to a first memory cell transistor in the first block, a non-zerovoltage is applied to the second bit line during the third time period.4. The device according to claim 3, further comprising: a first wordline that is electrically connected to gates of the first memory celltransistor, the second memory cell transistor, the third memory celltransistor, and the fourth memory cell transistor.
 5. The deviceaccording to claim 4, wherein the first select gate line and the thirdselect gate line are electrically connected, and the second select gateline and the fourth select gate line are electrically connected.
 6. Thedevice according to claim 1, wherein the first block includes aplurality of memory cell transistors that are arranged on a plane. 7.The device according to claim 1, wherein the first block includes aplurality of memory cell transistors that are three-dimensionallyarranged above a well region.
 8. A method of writing data in asemiconductor memory device comprising a first block including a firstmemory string that includes a first memory cell transistor and a firstselect transistor, a second memory string that includes a second memorycell transistor and a second select transistor, a first select gate linethat is electrically connected to a gate of the first select transistor,a second select gate line that is electrically connected to a gate ofthe second select transistor, and a first bit line electricallyconnected to a first end of the first memory string and a first end ofthe second memory string, said method comprising: performing a coarsewriting operation to a memory cell transistor in the first block; andthen performing a fine writing operation to the memory cell transistor,wherein at least one of the coarse and fine writing operations includethe steps of: applying a first voltage to the first select gate lineduring a first time period, applying a second voltage to the secondselect gate line and a non-zero voltage to the first bit line, during asecond time period, and applying a third voltage lower than the secondvoltage to the second select gate line and a zero voltage to the firstbit line during a third time period that begins after the second timeperiod.
 9. The method according to claim 8, wherein the semiconductormemory device further comprises a first word line that is electricallyconnected to gates of the first memory cell transistor and the secondmemory cell transistor.
 10. The method according to claim 8, wherein thefirst block further includes a third memory string that includes a thirdmemory cell transistor and a third select transistor and a fourth memorystring that includes a fourth memory cell transistor and a fourth selecttransistor, and the semiconductor memory device further comprises athird select gate line that is electrically connected to a gate of thethird select transistor, a fourth select gate line that is electricallyconnected to a gate of the fourth select transistor, and a second bitline electrically connected to a first end of a third memory string inthe first block and a first end of a fourth memory string in the firstblock, wherein during writing of data to a first memory cell transistorin the first block, a non-zero voltage is applied to the second bit lineduring a third time period.
 11. The method according to claim 10,wherein the semiconductor memory device further comprises a first wordline that is electrically connected to gates of the first memory celltransistor, the second memory cell transistor, the third memory celltransistor, and the fourth memory cell transistor.
 12. The methodaccording to claim 11, wherein the first select gate line and a thirdselect gate line that are electrically connected, the second select gateline and the fourth select gate line that are electrically connected.13. The method according to claim 8, wherein the first block includes aplurality of memory cell transistors that are arranged on a plane. 14.The device according to claim 9, wherein the first block includes aplurality of memory cell transistors that are three-dimensionallyarranged above a well region.